![]() ![]() New product developments are done to introduce new products with the same/improved features in response to high demand and also to target new markets, sell more and increase revenue streams, and increase market share.For instance, in August 2020, Mitsubishi Electric Corporation a Japanese company specializing in the manufacture of electrical and electronic equipment launched the LV100-type T-series insulated gate bipolar transistor (IGBT) module for industrial applications. New product development is a key trend gaining popularity in the insulated gate bipolar transistor (IGBT) market.Major companies operating in the insulated gate bipolar transistors market are focused on developing new products to increase their product portfolio and meet customer demand. Therefore, the increased production of electric vehicles drives the insulated gate bipolar transistor market. Sales in the United States more than doubled in the first quarter of 2020, albeit from a very lower basis. IGBT is a highly efficient component for EV motors due to its fast switching characteristics which lead to less power usage resulting in greater mileage.There will be a significant demand for IGBTs in response to the increased production of EVs.įor instance, according to the International Energy Agency (IEA), there will be 125 million electric vehicles on the roads by 2030.The global electric car sales increased by roughly 140% in the first quarter of 2021 compared to the same period in 2020, owing to sales of around 500,000 vehicles in China and around 450,000 in Europe. The increased production of electric vehicles (EV) is expected to propel the growth of the insulated gate bipolar transistor (IGBT) market.IGBTs are a type of semiconductor device used as an electronic switch that is used to take DC power from a car battery and convert AC control signals to the high power needed to turn the motor through an inverter. IGBT have there types of power rating namely high power, medium power and low power and are used in ev/hev, renewables, ups, rail, motor drives, industrial and commercial. The main types of insulated gate bipolar transistor (IGBT) are discrete and modular.The discrete insulated gate bipolar transistors used in power factor correction circuits and dc/ac converter circuits, as well as ups, power conditioners, air conditioners, and welding equipment. The regions covered in the insulated gate bipolar transistor (IGBT) market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East and Africa. These devices are typically employed in amplifiers to switch/process complex wave patterns with pulse width modulation (PWM).Īsia-Pacific was the largest region in the insulated gate bipolar transistor (IGBT) market in 2022. The insulated gate bipolar transistor (IGBT) refers to a three-terminal semiconductor switching device used in a variety of electronic devices for fast switching with high efficiency. The value of goods in this market includes related services sold by the creators of the goods. The insulated gate bipolar transistor (IGBT) market consists of sales of punch through IGBT and non-punch through IGBT.Values in this market are ‘factory gate’ values, that is the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors, and retailers) or directly to end customers. The insulated gate bipolar transistor (IGBT) market is expected to grow to $15.27 billion in 2027 at a CAGR of 16.0%. The war between these two countries has led to economic sanctions on multiple countries, a surge in commodity prices, and supply chain disruptions, causing inflation across goods and services, and affecting many markets across the globe. The Russia-Ukraine war disrupted the chances of global economic recovery from the COVID-19 pandemic, at least in the short term. The global insulated gate bipolar transistor (IGBT) market grew from $7.27 billion in 2022 to $8.42 billion in 2023 at a compound annual growth rate (CAGR) of 15.7%. ![]() ![]() , Danfoss Group, Toshiba Corpotration, NXP Semiconductors NV, STMicroelectronics NV, Fairchild Semiconductor International Inc., Mitsubishi Electric Corporation, Hitachi Ltd., Littelfuse Inc., Starpower Semiconductor Ltd., Vishay Intertechnology and IXYS Corporation. New York, Ma(GLOBE NEWSWIRE) - announces the release of the report "Insulated Gate Bipolar Transistor (IGBT) Global Market Report 2023". Major players in the insulated gate bipolar transistor (igbt) market are Renesas Electronics Corporation, Infineon Technologies AG, Fuji Electric Co Ltd., ROHM Co Ltd., SEMIKRON International GmbH, ABB Ltd. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |